六合彩17期
浏览历史
名称 厂商 描述
TP65H035WS
Transphorm
采用 TO-247 封装的 650V 35mΩ 氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
650V 35mΩ GaN FET in TO-247.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
TP65H050WS
Transphorm
采用 TO-247 封装的 650V 35mΩ 氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
650V 50mΩ GaN FET in TO-247.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance and offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
TP90H180PS
Transphorm
900V 170mΩ GaN FET in TO-220。通过更低的栅极电荷,更低的交叉损耗和更小的反向恢复电荷,提高了硅的效率。
900V 170mΩ GaN FET in TO-220.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
TPH3205WSBQA
Transphorm
650V 49mΩ AEC-Q101 Qualified GaN FET in TO-247。它结合了最先进的高压GaN HEMT和低压硅MOSFET技术 - 提供卓越的可靠性和性能。
650V 49mΩ AEC-Q101 Qualified GaN FET in TO-247.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.The device is also automotive qualified, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.
TPH3206PSB
Transphorm
采用 TO-220 封装的 650V 150mΩ 氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
650V 150mΩ GaN FET in TO-220.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
TPH3208PS
Transphorm
采用 TO-220 封装的 650V 110mΩ氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
650V 110mΩ GaN FETs in TO-220.It combines a state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
TPH3212PS
Transphorm
采用 TO-220 封装的 650V 72mΩ 氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
650V 72mΩ GaN FET in TO-220.It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
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六合彩17期
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